全文获取类型
收费全文 | 228篇 |
免费 | 27篇 |
国内免费 | 17篇 |
专业分类
化学 | 70篇 |
晶体学 | 9篇 |
力学 | 35篇 |
数学 | 6篇 |
物理学 | 152篇 |
出版年
2023年 | 1篇 |
2022年 | 3篇 |
2021年 | 7篇 |
2020年 | 7篇 |
2019年 | 2篇 |
2018年 | 8篇 |
2017年 | 6篇 |
2016年 | 10篇 |
2015年 | 9篇 |
2014年 | 10篇 |
2013年 | 8篇 |
2012年 | 11篇 |
2011年 | 12篇 |
2010年 | 8篇 |
2009年 | 15篇 |
2008年 | 20篇 |
2007年 | 24篇 |
2006年 | 20篇 |
2005年 | 13篇 |
2004年 | 10篇 |
2003年 | 16篇 |
2002年 | 11篇 |
2001年 | 4篇 |
2000年 | 4篇 |
1999年 | 10篇 |
1998年 | 6篇 |
1997年 | 3篇 |
1996年 | 1篇 |
1995年 | 2篇 |
1993年 | 4篇 |
1992年 | 2篇 |
1991年 | 1篇 |
1988年 | 1篇 |
1987年 | 1篇 |
1980年 | 1篇 |
1976年 | 1篇 |
排序方式: 共有272条查询结果,搜索用时 15 毫秒
1.
2.
F. Prez-Willard C. Sürgers H. Von Lhneysen P. Pfundstein 《Physica E: Low-dimensional Systems and Nanostructures》2004,22(4):872-880
The electronic transport through nanostructured bismuth nanobridges has been investigated at low temperatures (T<2 K) and in magnetic fields B up to 8.5 T. The samples show reproducible resistance fluctuations as a function of B, superimposed on a large magnetoresistance of up to 50%. In addition, time-dependent resistance fluctuations in zero magnetic field demonstrate the presence of bistable scatterers in the constriction region of our samples, which are described by two-level systems. Their dynamics are shown to be sensitive to subtle modifications of the static scatterer configuration in their vicinity, which cannot be detected in the sample magnetofingerprint. 相似文献
3.
Jack Harrowfield Dominique Matt 《Journal of inclusion phenomena and macrocyclic chemistry》2004,50(3-4):133-150
The problems involved in identifying and quantifying labile interactions considered to influence complex compound structures are highlighted through the assessment of four different families of metal complexes for which extensive crystallographic data are available. Modification of the charge distribution within a ligand molecule as a result of coordination is one factor with a number of ramifications. A detailed analysis of evidence for both intra- and inter-molecular attractions in dimethylsulfoxide complexes of metal perchlorates is used to provide a basis for the consideration of weak interactions between complex ions involving forces including phenyl-group attractions, hydrogen bonding and cavity inclusion. 相似文献
4.
The understanding of mesoscopic transport has now attained an ultimate simplicity. Indeed, orthodox quantum kinetics would seem to say little about mesoscopics that has not been revealed — nearly effortlessly — by more popular means. Such is far from the case, however. The fact that kinetic theory remains very much in charge is best appreciated through the physics of a quantum point contact. While discretization of its conductance is viewed as the exclusive result of coherent, single-electron-wave transmission, this does not begin to address the paramount feature of all metallic conduction: dissipation. A perfect quantum point contact still has finite resistance, so its ballistic carriers must dissipate the energy gained from the applied field. How do they manage that? The key is in standard many-body quantum theory, and its conservation principles. 相似文献
5.
M. Dubé C. Daneault V. Vuorinen M. Alava M. Rost 《The European Physical Journal B - Condensed Matter and Complex Systems》2007,56(1):15-26
We investigate the structure and dynamics of the interface between
two immiscible liquids in a three-dimensional disordered porous
medium. We apply a phase-field model that includes explicitly
disorder and discuss both spontaneous and forced imbibition.
The structure of the interface is dominated by a length scale
ξ× which arises from liquid conservation. We further show
that disorder in the capillary and permeability act on different
length scales and give rise to different scalings and
structures of the interface properties. We conclude with a
range of applications. 相似文献
6.
High-temperature isothermal capacitance transient spectroscopy (H-ICTS) measurements were conducted to characterize near mid-gap defects, which are the origin of the memory effect in Ni/p-GaN Schottky contacts. A large single peak was detected only under the forward bias conditions. This indicates that the defects were located in the vicinity of the interface. The change of the peak height and position of the ICTS curves under various bias conditions were qualitatively interpreted by the distribution of the defects and the current flow effect. 相似文献
7.
I. Tsiaoussis N. Frangis C. Manolikas T.A. Nguyen Tan 《Journal of Crystal Growth》2007,300(2):368-373
Pd thin films, grown on Si-rich 6H-SiC(0 0 0 1) substrates, were studied by atomic force microscopy, electron diffraction and high-resolution transmission electron microscopy. It is concluded that the growth is successful only when all the growth process takes place at room temperature. Under these conditions a very good epitaxial growth of Pd is achieved, despite the large misfit (about 8.6%) between Pd and the substrate and the existence of a semi-amorphous layer between the thin film and the substrate. A large number of twins appear in these films. 相似文献
8.
The rectifying junction characteristics of the organic compound pyronine-B film on a p-type Si substrate has been studied. The pyronine-B has been sublimed on the top of p-Si surface. The barrier height and ideality factor values of 0.79±0.04 and 1.13±0.06 eV for this structure have been obtained from the forward bias current-voltage (I-V) characteristics. From the low capacitance-frequency (C-f) characteristics as well as conductance-frequency (G-f) characteristics, the energy distribution of the interface states and their relaxation time have been determined in the energy range of (0.53−Ev)-(0.79−Ev) eV taking into account the forward bias I-V data. The interface state density Nss ranges from 4.93×1010 cm−2 eV−1 in (0.79−Ev) eV to 3.67×1013 cm−2 eV−1 in (0.53−Ev) eV. Furthermore, the relaxation ranges from 3.80×10−3 s in (0.53−Ev) eV to 4.21×10−4 s in (0.79−Ev) eV. It has been seen that the interface state density has an exponential rise with bias from the midgap towards the top of the valence band. The relaxation time shows a slow exponential rise with bias from the top of the valence band towards the midgap. 相似文献
9.
The new layered ternary compound Nb3GexTe6 (x ? 0.90) was prepared by direct combination of the elements taken in the stoichiometric proportions 3 : 1 : 6, heated at 1 000 °C for 10 days in silica tubes and quenched to room temperature. The phase crystallizes in the orthorhombic symmetry, space group Pnma (#62), with the following single crystal refined parameters: a = 643.18(5) pm, b = 1391.98(11)pm and c = 1 154.07(5) pm, with Z = 4. The structure was refined to an R of 3.4% (Rw = 4.6%), with 1969 independent reflexions and 49 parameters. The structure is based on the close stacking of trigonal prismatic (TP) slabs in the AA/BB mode. The slabs can be seen as built up from face sharing biprisms, which are filled either by one or by two niobium cations situated in the middle of the trigonal prisms. The germanium is located in the middle of the common face of two prisms, leading to a rather unusual anionic square coordination. The refinements showed that this latter cation does not fill completely its square site. No cation was found in the van der Waals gap between the slabs. The mean dGe? Te distance (276.5 pm) is in agreement with GeII cations, while some Te …? Te distances (from 333.84 to 361.65pm) are too short for anions in a simple contact. These bonding distances, already mentionned in some MTe2 compounds, are to be ascribed to charge transfer in the structure, with a partial oxidation state for the tellurium anions. Short Nb? Nb and Nb? Ge distances (292.0 and 281.3 pm, respectively) imply intercationic bonding within the slabs. 相似文献
10.